PART |
Description |
Maker |
MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V. M/A-COM Technology Solutions, Inc.
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
DME2031-225 DMJ2303-221 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
MSS60453-H40 |
SILICON, HIGH BARRIER SCHOTTKY, MIXER DIODE
|
|
HSB0104YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
HSD226 HSD226-N |
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
RKD702KL RKD702KL-N |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
HSL226_07 HSL226 HSL226-N |
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
ZHCS400 |
SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
|
Diodes Incorporated
|